semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. 2n6800 document number 3097 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk v gs gate ? source voltage i d continuous drain current (v gs = 10v , t case = 25c) i d continuous drain current (v gs = 10v , t case = 100c) i dm pulsed drain current 1 p d power dissipation @ t case = 25c linear derating factor dv/dt peak diode recovery 3 t j , t stg operating and storage temperature range r jc thermal resistance junction to case r jca thermal resistance junction-to-ambient 20v 3a 2a 12a 25w 0.20w/c 4v/ns ?55 to 150c 5.0c/w 175c/w mechanical data dimensions in mm (inches) 0.89 (0.035) max. 12.70 (0.500) min. 4.06 (0.16) 4.57 (0.18) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 0.41 (0.016) 0.53 (0.021) dia. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2.54 (0.100) 5.08 (0.200) typ. 45 1 2 3 absolute maximum ratings (t case = 25 c unless otherwise stated) to39 ? package (to205af) notes 1) pulse test: pulse width 300 s, ? 2% 2) @ v dd = 50v , l 0.100mh , r g = 25 ? , peak i l = 1.5a , starting t j = 25 c 3) @ i sd 1.5a , di/dt 50a/ s , v dd bv dss , t j 150 c , suggested r g = 7.5 ? n?channel enhance- ment power mosfet features avalanche energy rated hermetically sealed dynamic dv/dt rating simple drive requirements pin 1 ? source pin 2 ? gate pin 3 ? drain bv dss 400v i d 3.0a r ds(on) 1.0 ? ?
parameter test conditions min. typ. max. unit 400 0.37 1 1.15 24 2 25 250 100 ? 100 620 200 75 19.1 33 15.8 6.7 19.9 30 35 55 35 3 12 1.4 700 6.2 negligible 5 15 2n6800 semelab plc. telephone +44(0)1455) 556565. fax +44(0)1455) 552612. e-mail: sales@semelab.co.uk website http://www.semelab.co.uk document number 3097 issue 1 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v gs = 0 i d = 1ma reference to 25 c i d = 1ma v gs = 10v i d = 2a v gs = 10v i d = 3a v ds = v gs i d = 250 a v ds 15v i ds = 2a v ds = 0.8xmax rating v gs = 0 t j = 125 c v gs = 20v v gs = ? 20v v gs = 0 v ds = 25v f = 1mhz v gs = 10v i d = 3a v ds = max rating x 0.5 v dd = 200v v gs = 10v i d = 3a r g = 7.5 ? i s = 3.0a t j = 25 c v gs = 0 i f = 3.0a t j = 25 c d i / d t 100a/ sv dd 50v electrical characteristics (t amb = 25 c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain to source on ? state resistance gate threshold voltage forward transconductance zero gate voltage drain current forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain ( ? miller ? ) charge turn ? on delay time rise time turn ? off delay time fall time continuous source current pulse source current 2 diode forward voltage reverse recovery timereverse recovery charge forward turn ? on time v v/ c ? v s ( ? a na pf nc ns a v ns c nh bv dss ? bv dss ? t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr t on l d l s static electrical ratings notes 1) pulse test: pulse width 300 s, ? 2% 2) repetitive rating ? pulse width limited by maximum junction temperature. dynamic characteristics source ? drain diode characteristics internal drain inductance (from centre of drain pad to die) internal source inductance (from centre of source pad to end of source bond wire) package characteristics ( ? )
|
